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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1398 2SC1398A DESCRIPTION *With TO-220 package *2SC1398 is complement to type 2SA748 *Large collector power dissipation APPLICATIONS *For medium power amplifier applicattions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO PARAMETER Collector-base voltage 2SC1398 VCEO Collector-emitter voltage 2SC1398A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 70 5 2 3 15 150 -55~150 V A A W CONDITIONS Open emitter VALUE 70 50 V UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SC1398 V(BR)CEO Collector-emitter breakdown voltage 2SC1398A V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2SC1398 hFE-2 DC current gain 2SC1398A fT Transition frequency IC=0.5A ; VCE=5V IC=1A ; VCE=5V IC=1mA ,IE=0 IC=1A; IB=0.1A IC=2A; IB=0.2A VCB=40V; IE=0 VCE=20V; IC=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10mA ,IB=0 CONDITIONS 2SC1398 2SC1398A MIN 50 TYP. MAX UNIT V 70 70 0.6 1.0 1.0 1.5 1 100 100 30 50 50 120 220 160 MHz V V V A A A hFE-2 Classifications Type No. 2SC1398 2SC1398A P 50-100 50-100 Q 80-160 80-160 R 120-220 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1398 2SC1398A Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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